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| PNP Silicon AF Transistors BC 856W ... BC 860W Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type BC 856 AW BC 856 BW BC 857 AW BC 857 BW BC 857 CW BC 858 AW BC 858 BW BC 858 CW BC 859 AW BC 859 BW BC 859 CW BC 860 BW BC 860 CW Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs Ordering Code (tape and reel) Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 Q62702-C2301 Q62702-C2302 Q62702-C2303 Pin Configuration 1 2 3 B E C Package1) SOT-323 1)For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 856W ... BC 860W Maximum Ratings Description Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC 856W BC 857W BC 858W Unit BC 860W BC 859W 65 80 80 5 45 50 50 5 100 200 250 150 -65 to 150 30 30 30 5 V V V V mA mA mW C C 240 105 K/W K/W Semiconductor Group 2 BC 856W ... BC 860W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 856W BC 857W, BC 860W BC 858W, BC 859W V(BR)CE0 65 45 30 80 50 30 80 50 30 V(BR)EB0 ICB0 - - hFE - - - 125 220 420 VCEsat - - VBEsat - - VBE(on) 600 - 650 - 750 820 700 850 - - 75 250 300 650 140 250 480 180 290 520 - - - 250 475 800 mV - - 15 5 nA A Values typ. max. Unit V - - - - - - - - - - - - - - - - - - - - Collector-base breakdown voltage V(BR)CB0 IC = 10 A BC 856W BC 857W, BC 860W BC 858W, BC 859W Collector-emitter breakdown voltage IC = 10 A, VBE = 0 BC 856W BC 857W, BC 860W BC 858W, BC 859W Emitter-base breakdown voltage IE = 1 A Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C DC current gain IC = 10 A, VCE = 5 V BC 856 AW ... BC 859 AW BC 856 BW ... BC 860 BW BC 857 CW ... BC 860 CW IC = 2 mA, VCE = 5 V BC 856 AW ... BC 859 AW BC 856 BW ... BC 860 BW BC 857 CW ... BC 860 CW Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1)Pulse V(BR)CES 5 - test: t 300 s, D = 2 %. Semiconductor Group 3 BC 856W ... BC 860W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VCB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW ... BC 859 AW BC 856 BW ... BC 860 BW BC 857 CW ... BC 860 CW Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW ... BC 859 AW BC 856 BW ... BC 860 BW BC 857 CW ... BC 860 CW Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW ... BC 859 AW BC 856 BW ... BC 860 BW BC 857 CW ... BC 860 CW Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 856 AW ... BC 859 AW BC 856 BW ... BC 860 BW BC 857 CW ... BC 860 CW Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 30 Hz ... 15 kHz BC 859W BC 860W BC 859W f = 1 kHz, f = 200 Hz BC 860W Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 10 Hz ... 50 Hz BC 860W Semiconductor Group 4 Values typ. max. Unit fT Cobo Cibo h11e - - - 250 3 10 - - - MHz pF k - - - 2.7 4.5 8.7 - - - 10- 4 - - - 1.5 2.0 3.0 - - - - - - - 200 330 600 - - - S h12e h21e h22e - - - F - - - - Vn 1.2 1.0 1.0 1.0 4 3 4 4 18 30 60 - - - dB V - - 0.110 BC 856W ... BC 860W Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 856W ... BC 860W Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 856W ... BC 860W h parameter he = f (IC) normalized VCE = 5 V h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 k, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, VCE = 5 V, RS = 2 k Semiconductor Group 7 BC 856W ... BC 860W Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8 |
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